MOSFETs P-Ch -60V -80A TO220-3 Product overview: SPP80P06P H from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, -80A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -80A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPP80P06P H can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1101641-SPP80P06P H
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 340W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 5.5mA
Max Gate Charge: 173nC @ 10V
Max Input Capacitance: 5033pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 64A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SPP80P06P H | 1101641-SPP80P06P H | SPP80P06P H |
| Product Name | -60V -80A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP80P06P H | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | |
| MOSFET Operating Mode | Enhancement | ||
| Transconductance | 0.0180 kS | ||
| PD | 340 milliwatts | 340000 milliwatts |