Infineon Technologies AG Single FETs, MOSFETs SPD22N08S2L-50

Description
N-Channel 75V 25A (Tc) 75W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet
Description
N-Channel 75V 25A (Tc) 75W (Tc) Surface Mount PG-TO252-3-11
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - SPD22N08S2L-50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD22N08S2L-50-ND
Single FETs, MOSFETs SPD22N08S2L-50-ND
N-Channel 75V 25A (Tc) 75W (Tc) Surface Mount PG-TO252-3-11

N-Channel 75V 25A (Tc) 75W (Tc) Surface Mount PG-TO252-3-11

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD22N08S2L-50 - 1101547-SPD22N08S2L-50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD22N08S2L-50
1101547-SPD22N08S2L-50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD22N08S2L-50 1101547-SPD22N08S2L-50
Manufacturer: Infineon Technologies Win Source Part Number: 1101547-SPD22N08S2L- 50 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: P-TO252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 2V @ 31μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1101547-SPD22N08S2L-50
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: P-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 2V @ 31μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD22N08S2L-50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD22N08S2L-50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD22N08S2L-50
MOSFET N-CH 75V 25A TO252-3

MOSFET N-CH 75V 25A TO252-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SPD22N08S2L-50-ND 1101547-SPD22N08S2L-50 SPD22N08S2L-50
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD22N08S2L-50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); P-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 75 volts
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