Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPD06N80C3 SPD06N80C3

Manufacturer: Infineon Technologies
Win Source Part Number: 091089-SPD06N80C3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Family Name: SPD06N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 3.9V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 785pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 3.8A, 10V
Alternative Parts (Cross-Reference): FCD850N80Z; TSM80N950CP ROG; STD9N80K5;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Communications & Networking, Consumer Electronics, Power Management

MOSFET N-CH 800V 6A 3TO252 Product overview: SPD06N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPD06N80C3 can be used for catalog matching and distributor lookup.