Infineon Technologies AG Single FETs, MOSFETs SPD04N60C3

Description
MOSFET N-CH 600V 4.5A TO252-3
Request a Quote Datasheet
Description
MOSFET N-CH 600V 4.5A TO252-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SPD04N60C3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SPD04N60C3
Single FETs, MOSFETs SPD04N60C3
MOSFET N-CH 600V 4.5A TO252-3

MOSFET N-CH 600V 4.5A TO252-3

Supplier's Site Datasheet
Electronic Wholesale - SPD04N60C3 - 1257868-SPD04N60C3 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Wholesale - SPD04N60C3
1257868-SPD04N60C3
Electronic Wholesale - SPD04N60C3 1257868-SPD04N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 1257868-SPD04N60C3 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: SPD04N60C3 Categories: Discrete Semiconductor Products Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.infineon.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 50W Alternative Parts (Cross-Reference): STD7NM64N; STD7N65M2; STD6N65M2; STD7N60M2; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 4.5A Rds On (Maximum) at Id, Vgs: 950mOhm at 2.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.9V at 200μA Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1257868-SPD04N60C3
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: SPD04N60C3
Categories: Discrete Semiconductor Products
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.infineon.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 50W
Alternative Parts (Cross-Reference): STD7NM64N; STD7N65M2; STD6N65M2; STD7N60M2;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 4.5A
Rds On (Maximum) at Id, Vgs: 950mOhm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.9V at 200μA
Gate Charge (Qg) (Maximum) at Vgs: 25nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 490pF at 25V

Buy Now Datasheet
Singapore
600V 4.5A TO252 MOSFET Transistor
278-SPD04N60C3
600V 4.5A TO252 MOSFET Transistor 278-SPD04N60C3
MOSFET N-CH 600V 4.5A TO252-3 Product overview: SPD04N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N60C3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 4.5A TO252-3 Product overview: SPD04N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 4.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 4.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPD04N60C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SPD04N60C3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPD04N60C3-ND
Single FETs, MOSFETs SPD04N60C3-ND
N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3

N-Channel 600V 4.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPD04N60C3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPD04N60C3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPD04N60C3
MOSFET N-CH 600V 4.5A TO252-3

MOSFET N-CH 600V 4.5A TO252-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number SPD04N60C3 1257868-SPD04N60C3 278-SPD04N60C3 SPD04N60C3-ND SPD04N60C3
Product Name Single FETs, MOSFETs Electronic Wholesale - SPD04N60C3 600V 4.5A TO252 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 4500 milliamps
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