Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPB80N03S2L-03 G

Win Source Part Number: 1278299-SPB80N03S2L-03 G
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
Mfr: Infineon Technologies
Other Names: SPB80N03S2L-03G,SPB80N03S2L03GXT,SPB80N03S2L-03 G,SP000200142
Base Product Number: SPB80N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2