Infineon Technologies AG -60V 18.6A MOSFET Transistor SPB18P06P G

MOSFETs P-Ch -60V 18.6A D2PAK-2 Product overview: SPB18P06P G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 18.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, 18.6A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPB18P06P G can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 105880-SPB18P06P G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 81.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 18.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 13.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance