Infineon Technologies AG Single FETs, MOSFETs SN7002N E6433

The SN7002N is an N-channel enhancement mode MOSFET designed for small-signal switching applications. It is packaged in a PG-SOT-23 surface-mount case and qualified to AEC-Q101. It has a maximum drain-source voltage of 60 V, a continuous drain current of 0.2 A at 25 °C, and a power dissipation of 0.36 W. The drain-source on-state resistance is 3.9 Ω typical at 4.5 V gate-source voltage and 0.17 A drain current. The device has a gate-source voltage rating of ±20 V and operates across a junction temperature range of -55 °C to +150 °C. Thermal resistance from junction to ambient is 350 K/W with minimal footprint. Reverse diode dv/dt is rated at 6 kV/μs. ESD tolerance is below 250 V per HBM.