MOSFET P-CH 30V 8A 8SO Product overview: SI4435DYTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4435DYTRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 028490-SI4435DYTRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: Si4435DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2320pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): Si4435DY-T1-REVA; Si4435DY-REVA-E3; SI4435DY-REVA-T1;
Introduction Date: October 14, 1999
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
P-Channel 30V 8A (Tc) 2.5W (Ta) Surface Mount 8-SO
30V 8A 2.5W 20mΩ@10V,8A 1V@250uA P Channel SOIC-8 MOSFETs ROHS
MOSFET P-CH 30V 8A 8SO
P CHANNEL MOSFET, 8A; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET Transistor, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET P-CH 30V 8A 8SO
MOSFET HEXFET P-CH Low 0.020 Ohm -30V
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4435DYTRPBF | 028490-SI4435DYTRPBF | SI4435DYPBFTR-ND | 1711913P | 1702264 | SI4435DYTRPBF | SI4435DYTRPBF | 39M3596 | 31K5362 | SI4435DYTRPBF | SI4435DYTRPBF |
| Product Name | 30V 8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4435DYTRPBF | Single FETs, MOSFETs | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | P Channel Mosfet, 8A; Channel Type Infineon | Mosfet Transistor, Full Reel; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
