Infineon Technologies AG Memory S29GL032N11WEI039

Description
IC FLASH 32MBIT PARALLEL WAFER
  • Memory - S29GL032N11WEI039 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - S29GL032N11WEI039 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 32MBIT PARALLEL WAFER
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL032N11WEI039 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL032N11WEI039
Memory S29GL032N11WEI039
IC FLASH 32MBIT PARALLEL WAFER

IC FLASH 32MBIT PARALLEL WAFER

Supplier's Site Datasheet
Memory - S29GL032N11WEI039 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29GL032N11WEI039
Memory S29GL032N11WEI039
FLASH - NOR Memory IC 32Mbit Parallel 110 ns Wafer

FLASH - NOR Memory IC 32Mbit Parallel 110 ns Wafer

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S29GL032N11WEI039 S29GL032N11WEI039
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 32000 kbits 32000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24501BVA - Lingto Electronic Limited
Rochester Electronics
Memory
24501BVA
View Details
Memory - 448-S25FL064LABMFA001-ND - DigiKey
Infineon Technologies AG
Memory
S25FL064LABMFA001
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
5 suppliers
Memory - AS5C1008 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C1008
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 54F189DLQB - Quarktwin Technology Ltd.
Texas Instruments
Memory
54F189DLQB
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers