Infineon Technologies AG Gate Driver ICs IRS21864S

600 V high-side and low-side gate driver IC with separate pin for logic ground EiceDRIVER™ 600 V high and low side gate driver IC with typical 4 A source and 4 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP. Summary of Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V Undervoltage lockout for both channels 3.3 V and 5 V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5 V offset Lower di/dt gate driver for better noise immunity Output source/sink current capability 4 A/4 A Applications 48 V intermediate bus converter (IBC) Home appliances Light electric vehicles (LEV) Motor Control Power conversion Designers who used this product also designed with BSC160N15NS5 | N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IDL04G65C5 | CoolSiC™ Schottky Diodes BSC010N04LSI | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant BSC007N04LS6 | N-Channel Power MOSFET IPT60R040S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R115CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS84P | Small signal/small power MOSFET BSO150N03MD G | N-Channel Power MOSFET BSC160N15NS5 | N-Channel Power MOSFET IPW60R070CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 IDL04G65C5 | CoolSiC™ Schottky Diodes BSC010N04LSI | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs ICE5QR1680BG | CoolSET™ Quasi Resonant BSC007N04LS6 | N-Channel Power MOSFET 1 2 3 4