Infineon Technologies AG Gate Driver ICs IRS2007S

Description
200 V half-bridge gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation EiceDRIVER™ 200 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in SOIC-8 package for MOSFETs. The MLPQ 4 x 4 14L package version is also available: IRS2007M. The IRS2007 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. Summary of Features I O+ / I O- of 290 mA / 600 mA typical gate current Gate drive supplies up to 20 V per channel Under voltage lockout for V CC, V BS 3.3 V, 5 V, 15 V input logic compatible Tolerant to negative transient voltage Designed for use with bootstrap power supplies Cross-conduction prevention logic Matched propagation delay for both channels Internal set dead-time High-side output in phase with HIN input Low-side output out of phase wit LIN input -40°C to 125°C operating range 2 kV HBM ESD RoHS compliant Benefits Space saving package, reduced BOM cost, smaller PCB at lower cost with simpler design Protection under abnormal operation, ensure reliable start-up operation Easy-to-use, straight-forward design Improved energy efficiency Fast and reliable switching Applications EV charging Industrial automation Light electric vehicles (LEV) Power tools Smart buildings Find our Variations IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S. IRS2007S/M: 200 V half-bridge gate driver IC with 160/150 ns propagation delay. Replace IRS2003S. IRS2008S/M: 200 V half-bridge gate driver IC with shutdown input and 160/150 ns propagation delay. Replace IRS2004S. Evaluation board for stepper motor available: EVAL-PS-IRS200X
Request a Quote Datasheet
Description
200 V half-bridge gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation EiceDRIVER™ 200 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in SOIC-8 package for MOSFETs. The MLPQ 4 x 4 14L package version is also available: IRS2007M. The IRS2007 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. Summary of Features I O+ / I O- of 290 mA / 600 mA typical gate current Gate drive supplies up to 20 V per channel Under voltage lockout for V CC, V BS 3.3 V, 5 V, 15 V input logic compatible Tolerant to negative transient voltage Designed for use with bootstrap power supplies Cross-conduction prevention logic Matched propagation delay for both channels Internal set dead-time High-side output in phase with HIN input Low-side output out of phase wit LIN input -40°C to 125°C operating range 2 kV HBM ESD RoHS compliant Benefits Space saving package, reduced BOM cost, smaller PCB at lower cost with simpler design Protection under abnormal operation, ensure reliable start-up operation Easy-to-use, straight-forward design Improved energy efficiency Fast and reliable switching Applications EV charging Industrial automation Light electric vehicles (LEV) Power tools Smart buildings Find our Variations IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S. IRS2007S/M: 200 V half-bridge gate driver IC with 160/150 ns propagation delay. Replace IRS2003S. IRS2008S/M: 200 V half-bridge gate driver IC with shutdown input and 160/150 ns propagation delay. Replace IRS2004S. Evaluation board for stepper motor available: EVAL-PS-IRS200X
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Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - IRS2007S - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
IRS2007S
Gate Driver ICs IRS2007S
200 V half-bridge gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation EiceDRIVER™ 200 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in SOIC-8 package for MOSFETs. The MLPQ 4 x 4 14L package version is also available: IRS2007M. The IRS2007 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications. Summary of Features I O+ / I O- of 290 mA / 600 mA typical gate current Gate drive supplies up to 20 V per channel Under voltage lockout for V CC, V BS 3.3 V, 5 V, 15 V input logic compatible Tolerant to negative transient voltage Designed for use with bootstrap power supplies Cross-conduction prevention logic Matched propagation delay for both channels Internal set dead-time High-side output in phase with HIN input Low-side output out of phase wit LIN input -40°C to 125°C operating range 2 kV HBM ESD RoHS compliant Benefits Space saving package, reduced BOM cost, smaller PCB at lower cost with simpler design Protection under abnormal operation, ensure reliable start-up operation Easy-to-use, straight-forward design Improved energy efficiency Fast and reliable switching Applications EV charging Industrial automation Light electric vehicles (LEV) Power tools Smart buildings Find our Variations IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S. IRS2007S/M: 200 V half-bridge gate driver IC with 160/150 ns propagation delay. Replace IRS2003S. IRS2008S/M: 200 V half-bridge gate driver IC with shutdown input and 160/150 ns propagation delay. Replace IRS2004S. Evaluation board for stepper motor available: EVAL-PS-IRS200X

200 V half-bridge gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation

EiceDRIVER™ 200 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in SOIC-8 package for MOSFETs. The MLPQ 4 x 4 14L package version is also available: IRS2007M.

The IRS2007 is a 200 V level shift junction isolated MOSFET driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.


Summary of Features

  • I O+ / I O- of 290 mA / 600 mA typical gate current
  • Gate drive supplies up to 20 V per channel
  • Under voltage lockout for V CC, V BS
  • 3.3 V, 5 V, 15 V input logic compatible
  • Tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set dead-time
  • High-side output in phase with HIN input
  • Low-side output out of phase wit LIN input
  • -40°C to 125°C operating range
  • 2 kV HBM ESD
  • RoHS compliant

Benefits

  • Space saving package, reduced BOM cost, smaller PCB at lower cost with simpler design
  • Protection under abnormal operation, ensure reliable start-up operation
  • Easy-to-use, straight-forward design
  • Improved energy efficiency
  • Fast and reliable switching

Applications

  • EV charging
  • Industrial automation
  • Light electric vehicles (LEV)
  • Power tools
  • Smart buildings

Find our Variations

IRS2005S/M: 200 V high-side and low-side gate driver IC with 680/150 ns propagation delay. Replace IRS2001S.

IRS2007S/M: 200 V half-bridge gate driver IC with 160/150 ns propagation delay. Replace IRS2003S.

IRS2008S/M: 200 V half-bridge gate driver IC with shutdown input and 160/150 ns propagation delay. Replace IRS2004S.

Evaluation board for stepper motor available: EVAL-PS-IRS200X

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number IRS2007S
Product Name Gate Driver ICs
Driver Type Dual Gate Driver
Output Current 0.2900 amps
Supply Voltage 10 to 20 volts
Propagation Delay 150 ns
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