Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLBD59N04E IRLBD59N04E

Manufacturer: Infineon Technologies
Win Source Part Number: 069710-IRLBD59N04E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263-5
Dimension: TO-263-6, D2Pak (5 Leads + Tab), TO-263BA
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 59A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 50nC @ 5V
Max Input Capacitance: 2190pF @ 25V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

MOSFET N-CH 40V 59A D2PAK-5 Product overview: IRLBD59N04E from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 59A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRLBD59N04E can be used for catalog matching and distributor lookup.