N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 083549-IRLB4030PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 130nC @ 4.5V
Max Input Capacitance: 11360pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.3 mOhm @ 110A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 180A TO220AB Product overview: IRLB4030PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB4030PBF can be used for catalog matching and distributor lookup.
MOSFET N-Ch 100V 180A HEXFET TO220AB
MOSFET N-Ch 100V 180A HEXFET TO220AB
MOSFET MOSFT 100V 180A 4.3mOhm 87nC
N CHANNEL MOSFET, 100V, 180A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes
MOSFET N-CH 100V 180A TO220AB
MOSFET N-CH 100V 180A TO220AB
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 448-IRLB4030PBF-ND | 083549-IRLB4030PBF | 278-IRLB4030PBF | 6887216 | IRLB4030PBF | 08R4847 | IRLB4030PBF | IRLB4030PBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB4030PBF | 100V 180A MOSFET Transistor | MOSFETs | MOSFET | N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | Tube | TO-220; To-220ab | TO-3; TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | |
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 370000 milliwatts | 370 milliwatts | 370000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
