Infineon Technologies AG MOSFETs IRLB4030PBF

Description
MOSFET N-Ch 100V 180A HEXFET TO220AB
Request a Quote Datasheet
Description
MOSFET N-Ch 100V 180A HEXFET TO220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 6887216 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
6887216
MOSFETs 6887216
MOSFET N-Ch 100V 180A HEXFET TO220AB

MOSFET N-Ch 100V 180A HEXFET TO220AB

Supplier's Site
MOSFETs - 1249026 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1249026
MOSFETs 1249026
MOSFET N-Ch 100V 180A HEXFET TO220AB

MOSFET N-Ch 100V 180A HEXFET TO220AB

Supplier's Site
Singapore, Singapore
100V 180A MOSFET Transistor
278-IRLB4030PBF
100V 180A MOSFET Transistor 278-IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB Product overview: IRLB4030PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB4030PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 180A TO220AB Product overview: IRLB4030PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 180A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 180A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRLB4030PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IRLB4030PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRLB4030PBF-ND
Single FETs, MOSFETs 448-IRLB4030PBF-ND
N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB

N-Channel 100V 180A (Tc) 370W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB4030PBF - 083549-IRLB4030PBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB4030PBF
083549-IRLB4030PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB4030PBF 083549-IRLB4030PBF
Manufacturer: Infineon Technologies Win Source Part Number: 083549-IRLB4030PBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 370W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 180A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 130nC @ 4.5V Max Input Capacitance: 11360pF @ 50V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4.3 mOhm @ 110A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 083549-IRLB4030PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 180A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 130nC @ 4.5V
Max Input Capacitance: 11360pF @ 50V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.3 mOhm @ 110A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRLB4030PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRLB4030PBF
Single FETs, MOSFETs IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB

MOSFET N-CH 100V 180A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFT 100V 180A 4.3mOhm 87nC

MOSFET MOSFT 100V 180A 4.3mOhm 87nC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRLB4030PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRLB4030PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRLB4030PBF
MOSFET N-CH 100V 180A TO220AB

MOSFET N-CH 100V 180A TO220AB

Supplier's Site
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon - 08R4847 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon
08R4847
N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon 08R4847
N CHANNEL MOSFET, 100V, 180A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 180A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 6887216 278-IRLB4030PBF 448-IRLB4030PBF-ND 083549-IRLB4030PBF IRLB4030PBF IRLB4030PBF IRLB4030PBF 08R4847
Product Name MOSFETs 100V 180A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLB4030PBF Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type Infineon
Polarity N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
Package Type TO-220; To-220ab Tube TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
Number of units in IC 1
V(BR)DSS 100 volts 100 volts 100 volts
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