Infineon Technologies AG Channel Type Infineon IRLB3036PBF.

Description
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:165A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:380W; No. of Pins:3Pins RoHS Compliant: Yes
Description
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:165A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:380W; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The IRLB3036PBF is an N-channel MOSFET designed for high-efficiency power switching applications such as DC motor drives and synchronous rectification in SMPS. It is packaged in a TO-220AB case with a maximum continuous drain current of 195 A limited by the package, and 270 A limited by silicon at 25°C. The device has a typical on-resistance of 1.9 mΩ at 10 V gate-source voltage and 2.2 mΩ at 4.5 V, optimized for logic-level drive. It supports a gate-to-source voltage of ±16 V, has a junction temperature range of -55°C to +175°C, and meets RoHS standards. The single-pulse avalanche energy is rated at 290 mJ. Thermal resistance is 0.40°C/W junction-to-case and 62°C/W junction-to-ambient on a PCB. The part is qualified for the industrial market.

Datasheet Summary
Powered by GS/AI

The IRLB3036PBF is an N-channel MOSFET designed for high-efficiency power switching applications such as DC motor drives and synchronous rectification in SMPS. It is packaged in a TO-220AB case with a maximum continuous drain current of 195 A limited by the package, and 270 A limited by silicon at 25°C. The device has a typical on-resistance of 1.9 mΩ at 10 V gate-source voltage and 2.2 mΩ at 4.5 V, optimized for logic-level drive. It supports a gate-to-source voltage of ±16 V, has a junction temperature range of -55°C to +175°C, and meets RoHS standards. The single-pulse avalanche energy is rated at 290 mJ. Thermal resistance is 0.40°C/W junction-to-case and 62°C/W junction-to-ambient on a PCB. The part is qualified for the industrial market.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Infineon - 27AC6940 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Infineon
27AC6940
Channel Type Infineon 27AC6940
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:165A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:380W; No. of Pins:3Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:165A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; Power Dissipation:380W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 27AC6940
Product Name Channel Type Infineon
Package Type TO-3
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