Manufacturer: Infineon Technologies
Win Source Part Number: 1047527-IRL8113STRLP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 105A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2840pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 105A D2PAK Product overview: IRL8113STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 105A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 105A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRL8113STRLPBF can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1047527-IRL8113STRLPBF | 285-IRL8113STRLPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113STRLPBF | 30V 105A MOSFET Transistor |
| Polarity | N-Channel; N-Channel | N-Channel |
| V(BR)DSS | 30 volts | |
| PD | 110000 milliwatts | 110000 milliwatts |