Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL8113PBF IRL8113PBF

Manufacturer: Infineon Technologies
Win Source Part Number: 069709-IRL8113PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 105A (Tc)
Gate-Source Threshold Voltage: 2.25V @ 250μA
Max Gate Charge: 35nC @ 4.5V
Max Input Capacitance: 2840pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 21A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 105A TO220AB Product overview: IRL8113PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 105A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 105A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL8113PBF can be used for catalog matching and distributor lookup.

N-Channel 30V 105A (Tc) 110W (Tc) Through Hole TO-220AB