MOSFET N-CH 40V 120A TO220AB Product overview: IRL40B215 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL40B215 can be used for catalog matching and distributor lookup.
N-Channel 40V 120A (Tc) 143W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 731477-IRL40B215
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 143W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.7mOhm at 98A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 84nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5225pF at 25V
MOSFET N-CH 40V 120A TO220AB
MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl
MOSFET, N-CH, 40V, 120A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRL40B215 | 448-IRL40B215-ND | 731477-IRL40B215 | IRL40B215 | 376-IRL40B215 | IRL40B215 | 53Y4835 |
| Product Name | 40V 120A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - IRL40B215 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 40V 120A | MOSFET | Mosfet, N-Ch, 40V, 120A, To-220Ab-3; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| Transconductance | 0.1760 kS | ||||||
| PD | 143 milliwatts | 143000 milliwatts | 143000 milliwatts |
