Infineon Technologies AG FETs - Single - IRL40B215 IRL40B215

Description
Manufacturer: Infineon Technologies Win Source Part Number: 731477-IRL40B215 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 143W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.7mOhm at 98A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 84nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5225pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 731477-IRL40B215 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 143W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.7mOhm at 98A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 84nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5225pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRL40B215 - 731477-IRL40B215 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRL40B215
731477-IRL40B215
FETs - Single - IRL40B215 731477-IRL40B215
Manufacturer: Infineon Technologies Win Source Part Number: 731477-IRL40B215 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 175°C Manufacturer Package: TO-220-3 Power Dissipation (Maximum): 143W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 40V Id - Continuous Drain Current: 120A Rds On (Maximum) at Id, Vgs: 2.7mOhm at 98A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 84nC at 4.5V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 5225pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 731477-IRL40B215
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 143W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 40V
Id - Continuous Drain Current: 120A
Rds On (Maximum) at Id, Vgs: 2.7mOhm at 98A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 84nC at 4.5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 5225pF at 25V

Buy Now
Single FETs, MOSFETs - 448-IRL40B215-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRL40B215-ND
Single FETs, MOSFETs 448-IRL40B215-ND
N-Channel 40V 120A (Tc) 143W (Tc) Through Hole TO-220AB

N-Channel 40V 120A (Tc) 143W (Tc) Through Hole TO-220AB

Buy Now Datasheet
Singapore
40V 120A MOSFET Transistor
278-IRL40B215
40V 120A MOSFET Transistor 278-IRL40B215
MOSFET N-CH 40V 120A TO220AB Product overview: IRL40B215 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL40B215 can be used for catalog matching and distributor lookup.

MOSFET N-CH 40V 120A TO220AB Product overview: IRL40B215 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 120A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 120A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL40B215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL40B215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL40B215
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL40B215
MOSFET N-CH 40V 120A TO220AB

MOSFET N-CH 40V 120A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl

MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl

Buy Now Datasheet
MOSFET N-CH 40V 120A - 376-IRL40B215 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 40V 120A
376-IRL40B215
MOSFET N-CH 40V 120A 376-IRL40B215
MOSFET N-CH 40V 120A

MOSFET N-CH 40V 120A

Supplier's Site
Mosfet, N-Ch, 40V, 120A, To-220Ab-3; Channel Type Infineon - 53Y4835 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 120A, To-220Ab-3; Channel Type Infineon
53Y4835
Mosfet, N-Ch, 40V, 120A, To-220Ab-3; Channel Type Infineon 53Y4835
MOSFET, N-CH, 40V, 120A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 40V, 120A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Utmel Electronic Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 731477-IRL40B215 448-IRL40B215-ND 278-IRL40B215 IRL40B215 IRL40B215 376-IRL40B215 53Y4835
Product Name FETs - Single - IRL40B215 Single FETs, MOSFETs 40V 120A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET MOSFET N-CH 40V 120A Mosfet, N-Ch, 40V, 120A, To-220Ab-3; Channel Type Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 40 volts 40 volts
PD 143000 milliwatts 143 milliwatts 143000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 Tube TO-220; TO-220-3 TO-3; TO-220
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