Manufacturer: Infineon Technologies
Win Source Part Number: 069691-IRL3103STRLPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 94W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 64A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 4.5V
Max Input Capacitance: 1650pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 12 mOhm @ 34A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
N-Channel 30V 64A (Tc) 94W (Tc) Surface Mount D2PAK
MOSFET N-CH 30V 64A D2PAK Product overview: IRL3103STRLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRL3103STRLPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 64A D2PAK
IRL3103 - HEXFET POWER MOSFET
MOSFET N-CH 30V 64A D2PAK
MOSFET, N-CH, 30V, 64A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power DissipationRoHS Compliant: Yes
MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 069691-IRL3103STRLPBF | IRL3103STRLPBF-ND | 278-IRL3103STRLPBF | IRL3103STRLPBF | IRL3103STRLPBF | 34AC1799 | IRL3103STRLPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL3103STRLPBF | Single FETs, MOSFETs | 30V 64A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 64A, To-263Ab; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 94000 milliwatts | 94000 milliwatts | 94000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-263; SOT3; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
