Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Dual rad hard power MOSFETs - IRHLUC7970Z4 IRHLUC7970Z4

The IRHLUC7970Z4 is a radiation-hardened, dual P-channel logic-level power MOSFET in an LCC-6 surface-mount package, designed for space and high-reliability applications. It has a drain-to-source breakdown voltage of -60V, a continuous drain current of -0.65A at 25°C, and a maximum on-state resistance of 1.6Ω at -4.5V gate-source voltage. The device features a total gate charge of 3.6nC, operates with CMOS and TTL compatible inputs, and is hermetically sealed. It is qualified to MIL-PRF-19500 for space applications and rated for a total ionizing dose of 100 krad(Si). The operating junction temperature ranges from -55°C to +150°C, and the device meets ESD rating Class 0B per MIL-STD-750, Method 1020.