Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Dual rad hard power MOSFETs - IRHLUC7670Z4 IRHLUC7670Z4

The IRHLUC7670Z4 is a radiation-hardened, dual-channel logic-level power MOSFET in an LCC-6 surface-mount package, designed for space and high-reliability applications. It features a 60V drain-source breakdown voltage, with a maximum on-resistance of 0.75Ω for the N-channel and 1.6Ω for the P-channel, and a total gate charge of 3.6nC for both channels. The device is hermetically sealed, weighs 0.2g, and supports continuous drain currents of 0.89A (N-channel) and -0.65A (P-channel) at 25°C. It is qualified per MIL-PRF-19500 and rated for 100 krad(Si) total ionizing dose. The part meets ESD Class 0B per MIL-STD-750, Method 1020, and exhibits immunity to single event effects with a safe operating area up to 90.7 MeV·cm²/mg for the N-channel and 85 MeV·cm²/mg for the P-channel. Operating junction temperature ranges from -55°C to +150°C.