Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4 IRHLUB7970Z4

Description
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Surface mount Light weight Complementary N-Channel Available - IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4 Also available with ceramic lid (IRHLUB79) ESD Rating: Class 0 per MIL-STD-750, Method 1020 Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUB7970Z4 UB, 100 krad(Si) TID, COTS IRHLUB7970Z4SCS UB, 100 krad(Si) TID, QIRL JANSR2N7626UB UB, 100 krad(Si) TID, QPL IRHLUB7930Z4 UB, 300 krad(Si) TID, COTS JANSF2N7626UB UB, 300 krad(Si) TID, QPL IRHLUBN7970Z4 UBN, 100 krad(Si) TID, COTS JANSR2N7626UBN UBN, 100 krad(Si) TID, QPL JANSF2N7626UBN UBN, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4 - IRHLUB7970Z4 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Surface mount Light weight Complementary N-Channel Available - IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4 Also available with ceramic lid (IRHLUB79) ESD Rating: Class 0 per MIL-STD-750, Method 1020 Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUB7970Z4 UB, 100 krad(Si) TID, COTS IRHLUB7970Z4SCS UB, 100 krad(Si) TID, QIRL JANSR2N7626UB UB, 100 krad(Si) TID, QPL IRHLUB7930Z4 UB, 300 krad(Si) TID, COTS JANSF2N7626UB UB, 300 krad(Si) TID, QPL IRHLUBN7970Z4 UBN, 100 krad(Si) TID, COTS JANSR2N7626UBN UBN, 100 krad(Si) TID, QPL JANSF2N7626UBN UBN, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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The IRHLUB7970Z4 is a radiation-hardened, P-channel power MOSFET designed for space and high-reliability applications, featuring a UB surface-mount package. It has a drain-to-source breakdown voltage of -60V, a continuous drain current of -0.53A at 25°C, and a maximum on-state resistance of 1.4Ω at -4.5V gate-source voltage. The device exhibits a total gate charge of 3.6nC and is hardened against single event effects, maintaining performance after exposure to 100 krad(Si) total ionizing dose. It is hermetically sealed, operates over a junction temperature range of -55°C to +150°C, and meets MIL-PRF-19500 and MIL-STD-750 Class 0B ESD standards. Weight is 43 mg typical.

Datasheet Summary
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The IRHLUB7970Z4 is a radiation-hardened, P-channel power MOSFET designed for space and high-reliability applications, featuring a UB surface-mount package. It has a drain-to-source breakdown voltage of -60V, a continuous drain current of -0.53A at 25°C, and a maximum on-state resistance of 1.4Ω at -4.5V gate-source voltage. The device exhibits a total gate charge of 3.6nC and is hardened against single event effects, maintaining performance after exposure to 100 krad(Si) total ionizing dose. It is hermetically sealed, operates over a junction temperature range of -55°C to +150°C, and meets MIL-PRF-19500 and MIL-STD-750 Class 0B ESD standards. Weight is 43 mg typical.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4 - IRHLUB7970Z4 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4
IRHLUB7970Z4
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4 IRHLUB7970Z4
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened 5V CMOS and TTL compatible Fast switching Low total gate charge Simple drive requirements Hermetically sealed Surface mount Light weight Complementary N-Channel Available - IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4 Also available with ceramic lid (IRHLUB79) ESD Rating: Class 0 per MIL-STD-750, Method 1020 Potential Applications Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails Synchronous rectification Active ORing circuits Power distribution circuits Load switch Slash sheet Similar Parts IRHLUB7970Z4 UB, 100 krad(Si) TID, COTS IRHLUB7970Z4SCS UB, 100 krad(Si) TID, QIRL JANSR2N7626UB UB, 100 krad(Si) TID, QPL IRHLUB7930Z4 UB, 300 krad(Si) TID, COTS JANSF2N7626UB UB, 300 krad(Si) TID, QPL IRHLUBN7970Z4 UBN, 100 krad(Si) TID, COTS JANSR2N7626UBN UBN, 100 krad(Si) TID, QPL JANSF2N7626UBN UBN, 300 krad(Si) TID, QPL

Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 100 krad(Si) TID, COTS

Features

  • Single event effect (SEE) hardened
  • 5V CMOS and TTL compatible
  • Fast switching
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Surface mount
  • Light weight
  • Complementary N-Channel Available - IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4
  • Also available with ceramic lid (IRHLUB79)
  • ESD Rating: Class 0 per MIL-STD-750, Method 1020

Potential Applications

  • Point-of-load (PoL) converters for FPGA, ASIC and DSP core rails
  • Synchronous rectification
  • Active ORing circuits
  • Power distribution circuits
  • Load switch

Slash sheet


Similar Parts

IRHLUB7970Z4

UB, 100 krad(Si) TID, COTS

IRHLUB7970Z4SCS

UB, 100 krad(Si) TID, QIRL

JANSR2N7626UB

UB, 100 krad(Si) TID, QPL

IRHLUB7930Z4

UB, 300 krad(Si) TID, COTS

JANSF2N7626UB

UB, 300 krad(Si) TID, QPL

IRHLUBN7970Z4

UBN, 100 krad(Si) TID, COTS


JANSR2N7626UBN UBN, 100 krad(Si) TID, QPL
JANSF2N7626UBN UBN, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHLUB7970Z4
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHLUB7970Z4
Polarity P-Channel; P
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