Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHLG77110 IRHLG77110

IRHLG77110 is a radiation-hardened 100V N-channel logic level power MOSFET in a hermetically sealed MO-036AB through-hole package, weighing 1.3 g. It is rated for 100 kRads(Si) total ionizing dose with a static drain-to-source on-resistance of 0.285 Ω at 1.8 A and 4.5 V gate drive. The device supports CMOS and TTL logic levels, features single event effect immunity up to LET of 85 MeV/(mg/cm²), and operates with a junction temperature range of -55°C to +150°C. It meets MIL-STD-750 Method 1020 for ESD classification Class 1A and is qualified under MIL-STD-750 Method 1019 for radiation testing. The gate threshold voltage remains stable post-irradiation, and the device is suitable for direct interface with 3.3V to 5V control circuits in space and high-radiation environments.