Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - Quad rad hard power MOSFETs - IRHG57110 IRHG57110

The IRHG57110 is a radiation-hardened, quad N-channel power MOSFET in a hermetically sealed MO-036AB ceramic package, designed for space applications requiring high reliability. It has a drain-to-source breakdown voltage of 100V, a continuous drain current of 1.6A, and a maximum on-state resistance of 0.29Ω. The device features a total gate charge of 17nC and operates with a junction temperature range of -55°C to +150°C. It is qualified to MIL-PRF-19500 and rated for up to 100 krad(Si) total ionizing dose, with single event effect hardening verified up to 84 MeV⋅cm²/mg. The part is ESD classified as Class 1A per MIL-STD-750, Method 1020, and weighs 1.3g typical.