Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130 IRHF93130

Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130 - IRHF93130 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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IRHF93130 is a radiation-hardened, P-channel power MOSFET for space applications, packaged in a TO-205AF (TO-39) hermetic ceramic case weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a maximum continuous drain current of -6.5 A at 25°C, and a static on-resistance of 0.30 Ω at -12 V gate-source voltage. The device is hardened to 300 krad(Si) total ionizing dose with single event effect immunity, features low gate charge, and is proton tolerant. It meets MIL-PRF-19500/630 and has an ESD rating of Class 1B per MIL-STD-750, Method 1020. The operating junction temperature range is -55°C to +150°C.

Datasheet Summary
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IRHF93130 is a radiation-hardened, P-channel power MOSFET for space applications, packaged in a TO-205AF (TO-39) hermetic ceramic case weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a maximum continuous drain current of -6.5 A at 25°C, and a static on-resistance of 0.30 Ω at -12 V gate-source voltage. The device is hardened to 300 krad(Si) total ionizing dose with single event effect immunity, features low gate charge, and is proton tolerant. It meets MIL-PRF-19500/630 and has an ESD rating of Class 1B per MIL-STD-750, Method 1020. The operating junction temperature range is -55°C to +150°C.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130 - IRHF93130 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130
IRHF93130
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130 IRHF93130
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL

Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 300 krad(Si) TID, COTS

Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Proton tolerant
  • Low total gate charge
  • Simple Drive Requirements
  • Hermetically Sealed
  • Ceramic package
  • Light weight
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Solid state power controller
  • Thermal management
  • Active ORing circuits
  • Redundant power distribution
  • Load switch
  • Battery charging
  • Battery management system

Slash Sheet


Similar Parts

IRHF9130

TO-205AF, 100 krad(Si) TID, COTS

JANSR2N7389

TO-205AF, 100 krad(Si) TID, QPL

IRHF93130

TO-205AF, 300 krad(Si) TID, COTS

JANTXVF2N7389

TO-205AF, 300 krad(Si) TID, QPL

JANSF2N7389

TO-205AF, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHF93130
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF93130
Polarity P-Channel; P
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