Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130 IRHF9130

Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130 - IRHF9130 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL
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Datasheet
Datasheet Summary
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The IRHF9130 is a radiation-hardened, P-channel power MOSFET designed for space applications, featuring a TO-205AF (TO-39) ceramic package and weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -6.5 A at 25°C, and a static drain-to-source on-resistance of 0.30 Ω at -12 V gate-source voltage. The device is hardened to 100 krad(Si) total ionizing dose and exhibits single event effect hardening. It is hermetically sealed, proton tolerant, and meets ESD Class 1B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 5.0 °C/W.

Datasheet Summary
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The IRHF9130 is a radiation-hardened, P-channel power MOSFET designed for space applications, featuring a TO-205AF (TO-39) ceramic package and weighing 0.98 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -6.5 A at 25°C, and a static drain-to-source on-resistance of 0.30 Ω at -12 V gate-source voltage. The device is hardened to 100 krad(Si) total ionizing dose and exhibits single event effect hardening. It is hermetically sealed, proton tolerant, and meets ESD Class 1B per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C, with a junction-to-case thermal resistance of 5.0 °C/W.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130 - IRHF9130 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130
IRHF9130
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130 IRHF9130
Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Low RDS(on) Proton tolerant Low total gate charge Simple Drive Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet Similar Parts IRHF9130 TO-205AF, 100 krad(Si) TID, COTS JANSR2N7389 TO-205AF, 100 krad(Si) TID, QPL IRHF93130 TO-205AF, 300 krad(Si) TID, COTS JANTXVF2N7389 TO-205AF, 300 krad(Si) TID, QPL JANSF2N7389 TO-205AF, 300 krad(Si) TID, QPL

Rad hard, -100V, -6.5A, single, P-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS

Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Proton tolerant
  • Low total gate charge
  • Simple Drive Requirements
  • Hermetically Sealed
  • Ceramic package
  • Light weight
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Solid state power controller
  • Thermal management
  • Active ORing circuits
  • Redundant power distribution
  • Load switch
  • Battery charging
  • Battery management system

Slash Sheet


Similar Parts

IRHF9130

TO-205AF, 100 krad(Si) TID, COTS

JANSR2N7389

TO-205AF, 100 krad(Si) TID, QPL

IRHF93130

TO-205AF, 300 krad(Si) TID, COTS

JANTXVF2N7389

TO-205AF, 300 krad(Si) TID, QPL

JANSF2N7389

TO-205AF, 300 krad(Si) TID, QPL

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRHF9130
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHF9130
Polarity P-Channel; P
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