The IRHF7430SE is a radiation-hardened N-channel power MOSFET for space applications, housed in a TO-205AF (TO-39) thru-hole package weighing 0.98 g. It has a drain-to-source breakdown voltage of 500 V, a continuous drain current rating of 2.5 A at 25°C, and a maximum on-state resistance of 1.77 Ω at VGS = 12 V and ID = 1.6 A. The device features a total gate charge of 30 nC and is rated for 100 krad(Si) total ionizing dose with single event effect hardening. It meets MIL-PRF-19500/675 qualification and is hermetically sealed with an ESD rating of Class 1C per MIL-STD-750, Method 1020.
Rad hard, 500V, 2.6A, single, N-channel MOSFET, R4 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS
Features
Potential Applications
Slash Sheet
Similar Parts
IRHF7430SE
TO-205AF, 100 krad(Si) TID, COTS
IRHF7430SESCS
TO-205AF, 100 krad(Si) TID, QIRL
JANTXVR2N7464T2 TO-205AF, 100 krad(Si) TID, QPL
JANSR2N7464T2
TO-205AF, 100 krad(Si) TID, QPL
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHF7430SE |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - N-channel rad hard power MOSFETs - IRHF7430SE |
| Polarity | N-Channel; N |