IRHE9230 is a radiation-hardened, P-channel power MOSFET designed for space applications, featuring a hermetically sealed ceramic LCC-18 package. It has a drain-to-source breakdown voltage of -200 V, a maximum continuous drain current of -4.0 A at 25°C, and a maximum on-resistance of 0.80 Ω at -12 V gate bias. The device is rated for 100 kRads(Si) total ionizing dose and exhibits single event effect hardening. It supports a junction temperature range of -55°C to +150°C, has an ESD rating of Class 1B per MIL-STD-750, Method 1020, and provides low gate charge and ease of paralleling for switching applications such as DC-DC conversion and motor control.
Rad hard, -200V, -4A, single, P-channel MOSFET, R4 in an 18-pin LCC packageage - 18-pin LCC, 100 krad(Si) TID, COTS
Features
Potential Applications
Slash sheet
Similar Parts
IRHE9230
18-pin LCC, 100 krad(Si) TID, COTS
JANSR2N7390U
18-pin LCC, 100 krad(Si) TID, QPL
JANSF2N7390U
18-pin LCC, 300 krad(Si) TID, QPL
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRHE9230 |
| Product Name | High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRHE9230 |
| Polarity | P-Channel; P |