Infineon Technologies AG High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV IRH9150SCV

Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-204AE package - Screening Level TXV Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Proton tolerant Hermetically sealed Ceramic package Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redudant power distribution Load switch Battery charging Similar Parts IRH9150SCV Screening Level TXV IRH9150 TO-204AE, 100 krad(Si) TID, COTS
  • High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV - IRH9150SCV - Infineon Technologies AG
    Infineon Technologies AG
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Description
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-204AE package - Screening Level TXV Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Proton tolerant Hermetically sealed Ceramic package Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redudant power distribution Load switch Battery charging Similar Parts IRH9150SCV Screening Level TXV IRH9150 TO-204AE, 100 krad(Si) TID, COTS
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Datasheet
Datasheet Summary
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IRH9150SCV is a radiation-hardened, P-channel power MOSFET designed for space applications, available in a TO-204AE (TO-3) ceramic package weighing 11.5 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -22 A at 25°C, and a maximum on-resistance of 0.080 Ω at -12 V gate-source voltage. The device is hardened to 100 kRads(Si) total ionizing dose, features low gate charge and proton tolerance, and is hermetically sealed with an ESD rating of Class 2 per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to 150°C.

Datasheet Summary
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IRH9150SCV is a radiation-hardened, P-channel power MOSFET designed for space applications, available in a TO-204AE (TO-3) ceramic package weighing 11.5 g. It has a drain-to-source breakdown voltage of -100 V, a continuous drain current of -22 A at 25°C, and a maximum on-resistance of 0.080 Ω at -12 V gate-source voltage. The device is hardened to 100 kRads(Si) total ionizing dose, features low gate charge and proton tolerance, and is hermetically sealed with an ESD rating of Class 2 per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to 150°C.

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High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV - IRH9150SCV - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV
IRH9150SCV
High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV IRH9150SCV
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-204AE package - Screening Level TXV Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Proton tolerant Hermetically sealed Ceramic package Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redudant power distribution Load switch Battery charging Similar Parts IRH9150SCV Screening Level TXV IRH9150 TO-204AE, 100 krad(Si) TID, COTS

Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a TO-204AE package - Screening Level TXV

Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Proton tolerant
  • Hermetically sealed
  • Ceramic package
  • Light weight
  • ESD Rating: Class 2 per MIL-STD-750, Method 1020

Potential Applications

  • DC-DC converter
  • Motor drives
  • Inrush current protection
  • Solid state power controller
  • Thermal management
  • Active ORing circuits
  • Redudant power distribution
  • Load switch
  • Battery charging

Similar Parts

IRH9150SCV

Screening Level TXV

IRH9150

TO-204AE, 100 krad(Si) TID, COTS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRH9150SCV
Product Name High Reliability - Space - Power - Rad hard MOSFETs - P-channel rad hard power MOSFETs - IRH9150SCV
Polarity P-Channel; P
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