Infineon Technologies AG Single FETs, MOSFETs IRFZ34NS

Description
N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Request a Quote Datasheet
Description
N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFZ34NS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFZ34NS-ND
Single FETs, MOSFETs IRFZ34NS-ND
N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

N-Channel 55V 29A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK

Buy Now Datasheet
FETs - Single - IRFZ34NS - 1188174-IRFZ34NS - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFZ34NS
1188174-IRFZ34NS
FETs - Single - IRFZ34NS 1188174-IRFZ34NS
Manufacturer: Infineon Technologies Win Source Part Number: 1188174-IRFZ34NS Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 3.8W, 68W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 29A Rds On (Maximum) at Id, Vgs: 40mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 700pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1188174-IRFZ34NS
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 3.8W, 68W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 29A
Rds On (Maximum) at Id, Vgs: 40mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 34nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 700pF at 25V

Buy Now
Singapore
55V 29A MOSFET Transistor
278-IRFZ34NS
55V 29A MOSFET Transistor 278-IRFZ34NS
MOSFET N-CH 55V 29A D2PAK Product overview: IRFZ34NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ34NS can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 29A D2PAK Product overview: IRFZ34NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFZ34NS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFZ34NS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFZ34NS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFZ34NS
MOSFET N-CH 55V 29A D2PAK

MOSFET N-CH 55V 29A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFZ34NS-ND 1188174-IRFZ34NS 278-IRFZ34NS IRFZ34NS
Product Name Single FETs, MOSFETs FETs - Single - IRFZ34NS 55V 29A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Tube TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 55 volts
QG 34 nC
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