N-Channel 40V 90A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
INTERNATIONAL RECTIFIER IRFU7440PBF MOSFET Transistor, N Channel, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V Product overview: IRFU7440PBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 90 A, 40 V, 0.0019 ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90 A, 40 V, 0.0019 ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU7440PBF can be used for catalog matching and distributor lookup.
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| DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFU7440PBF-ND | 278-IRFU7440PBF | 376-IRFU7440PBF | IRFU7440PBF | IRFU7440PBF | IRFU7440PBF |
| Product Name | Single FETs, MOSFETs | N-Channel 90 A 40 V 0.0019 ohm MOSFET Transistor | Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - IPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | |||
| PD | 140000 milliwatts | 140000 milliwatts | 140000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Transistor Technology / Material | SILICON | MOSFET (Metal Oxide) |
