Infineon Technologies AG 100V 13A MOSFET Transistor IRFU5410

MOSFET P-CH 100V 13A IPAK Product overview: IRFU5410 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU5410 can be used for catalog matching and distributor lookup.

P-Channel 100V 13A (Tc) 66W (Tc) Through Hole IPAK (TO-251AA)

Manufacturer: Infineon Technologies
Win Source Part Number: 1188111-IRFU5410
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 66W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 13A
Rds On (Maximum) at Id, Vgs: 205mOhm at 7.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 58nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 760pF at 25V