Infineon Technologies AG P-Channel Power MOSFET IRFU5305

Description
-55V Single P-Channel Power MOSFET in a I-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IR2112S | Gate driver ICs IRF630N | N-Channel Power MOSFET IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet
Description
-55V Single P-Channel Power MOSFET in a I-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IR2112S | Gate driver ICs IRF630N | N-Channel Power MOSFET IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - IRFU5305 - Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRFU5305
P-Channel Power MOSFET IRFU5305
-55V Single P-Channel Power MOSFET in a I-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Light electric vehicles (LEV) Designers who used this product also designed with IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IRL540N | N-Channel Power MOSFET IR2112S | Gate driver ICs IRF630N | N-Channel Power MOSFET IRF530NS | N-Channel Power MOSFET IRF3415S | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRL530NS | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRFP90N20D | N-Channel Power MOSFET 1 2 3

-55V Single P-Channel Power MOSFET in a I-Pak package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.


Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement

Applications

  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • IRF530NS |
    N-Channel Power MOSFET
  • IRF3415S |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IPD33CN10N G |
    N-Channel Power MOSFET
  • IRL530NS |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRFP90N20D |
    N-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IRL540N |
    N-Channel Power MOSFET
  • IR2112S |
    Gate driver ICs
  • IRF630N |
    N-Channel Power MOSFET
  • IRF530NS |
    N-Channel Power MOSFET
  • IRF3415S |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IPD33CN10N G |
    N-Channel Power MOSFET
  • IRL530NS |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRFP90N20D |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
FETs - Single - IRFU5305 - 1188110-IRFU5305 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFU5305
1188110-IRFU5305
FETs - Single - IRFU5305 1188110-IRFU5305
Manufacturer: Infineon Technologies Win Source Part Number: 1188110-IRFU5305 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: IPAK (TO-251) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 110W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 31A Rds On (Maximum) at Id, Vgs: 65mOhm at 16A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1188110-IRFU5305
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 110W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 31A
Rds On (Maximum) at Id, Vgs: 65mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 63nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1200pF at 25V

Buy Now
Single FETs, MOSFETs - IRFU5305 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFU5305
Single FETs, MOSFETs IRFU5305
MOSFET P-CH 55V 31A IPAK

MOSFET P-CH 55V 31A IPAK

Supplier's Site
Singapore
55V 31A MOSFET Transistor
278-IRFU5305
55V 31A MOSFET Transistor 278-IRFU5305
MOSFET P-CH 55V 31A IPAK Product overview: IRFU5305 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU5305 can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 31A IPAK Product overview: IRFU5305 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU5305 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFU5305-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU5305-ND
Single FETs, MOSFETs IRFU5305-ND
P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFU5305 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFU5305
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFU5305
MOSFET P-CH 55V 31A IPAK

MOSFET P-CH 55V 31A IPAK

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number IRFU5305 1188110-IRFU5305 IRFU5305 278-IRFU5305 IRFU5305-ND IRFU5305
Product Name P-Channel Power MOSFET FETs - Single - IRFU5305 Single FETs, MOSFETs 55V 31A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.0650 ohms
TJ 175 C (347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-252 (DPAK); IPAK SOT3 TO-251-3 Short Leads, IPak, TO-251AA Tube TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
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