Infineon Technologies AG Single FETs, MOSFETs IRFU220N

Description
N-Channel 200V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251AA)
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Description
N-Channel 200V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251AA)
Request a Quote Datasheet

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Single FETs, MOSFETs - IRFU220N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFU220N-ND
Single FETs, MOSFETs IRFU220N-ND
N-Channel 200V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251AA)

N-Channel 200V 5A (Tc) 43W (Tc) Through Hole IPAK (TO-251AA)

Buy Now Datasheet
FETs - Single - IRFU220N - 1188072-IRFU220N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFU220N
1188072-IRFU220N
FETs - Single - IRFU220N 1188072-IRFU220N
Manufacturer: Infineon Technologies Win Source Part Number: 1188072-IRFU220N Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: IPAK (TO-251) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 43W Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 75 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 200V Id - Continuous Drain Current: 5A Rds On (Maximum) at Id, Vgs: 600mOhm at 2.9A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1188072-IRFU220N
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 43W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 5A
Rds On (Maximum) at Id, Vgs: 600mOhm at 2.9A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 23nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 300pF at 25V

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Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Power MOSFET
Product Number IRFU220N-ND 1188072-IRFU220N
Product Name Single FETs, MOSFETs FETs - Single - IRFU220N
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3
V(BR)DSS 200 volts
QG 23 nC
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