Infineon Technologies AG N-Channel 60V 79A MOSFET Transistor IRFU1018EPBF

N-Channel MOSFET, 60V, 79A, 8.4mR, TO-251AA Product overview: IRFU1018EPBF from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 79A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 79A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFU1018EPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1188061-IRFU1018EPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRFU1018E
Categories: Discrete Semiconductor Products
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 110W
Alternative Parts (Cross-Reference): STU60N55F3; 2SK3814-AZ; 2SK3814-A; 2SK3814;
Introduction Date: February 22, 2008
ECCN: EAR99
Country of Origin: China, Mexico, Singapore
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 75
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 56A
Rds On (Maximum) at Id, Vgs: 8.4mOhm at 47A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 69nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2290pF at 50V

N-Channel 60V 56A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)