Infineon Technologies AG 200V 0.17ohm 16A MOSFET Transistor IRFSL17N20D

Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A) | MOSFET N-CH 200V 16A TO-262 Product overview: IRFSL17N20D from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 0.17ohm, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 0.17ohm, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFSL17N20D can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1188042-IRFSL17N20D
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Power Dissipation (Maximum): 3.8W, 140W
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 16A
Rds On (Maximum) at Id, Vgs: 170mOhm at 9.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 50nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 1100pF at 25V