Infineon Technologies AG N-Channel Power MOSFET IRFS7730

Description
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Automotive 48 V battery management system (BMS) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
  • N-Channel Power MOSFET - IRFS7730 - Infineon Technologies AG
    Infineon Technologies AG
Request a Quote
Description
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Automotive 48 V battery management system (BMS) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

IRFS7730PbF is a 75V N-channel Power MOSFET in a D2-Pak (TO-263AB) package, designed for motor drive, synchronous rectifier, and DC-DC converter applications. It has a maximum continuous drain current of 195A limited by the package, a typical on-resistance of 2.2mΩ at 10V gate voltage, and a pulsed drain current capability of 984A. The device features enhanced ruggedness, fully characterized capacitance and avalanche SOA, and supports a junction temperature range of -55°C to 175°C. It is RoHS compliant and meets AEC-Q200 industrial qualification standards. Thermal resistance from junction to ambient is 40°C/W when mounted on a PCB.

Datasheet Summary
Powered by GS/AI

IRFS7730PbF is a 75V N-channel Power MOSFET in a D2-Pak (TO-263AB) package, designed for motor drive, synchronous rectifier, and DC-DC converter applications. It has a maximum continuous drain current of 195A limited by the package, a typical on-resistance of 2.2mΩ at 10V gate voltage, and a pulsed drain current capability of 984A. The device features enhanced ruggedness, fully characterized capacitance and avalanche SOA, and supports a junction temperature range of -55°C to 175°C. It is RoHS compliant and meets AEC-Q200 industrial qualification standards. Thermal resistance from junction to ambient is 40°C/W when mounted on a PCB.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRFS7730 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS7730
N-Channel Power MOSFET IRFS7730
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Automotive 48 V battery management system (BMS) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Applications

  • Automotive 48 V battery management system (BMS)

Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Silicon optimized for applications switching below <100 KHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS7730
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0026 ohms
Unlock Full Specs
to access all available technical data