Infineon Technologies AG N-Channel Power MOSFET IRFS7730-7P

Description
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate drive voltage (called normal level) Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package Higher current-rating (by 23%) vs D2PAK (of same die-size) High-current carrying capability package(up to 240 A, die-size dependent)
  • N-Channel Power MOSFET - IRFS7730-7P - Infineon Technologies AG
    Infineon Technologies AG
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Description
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate drive voltage (called normal level) Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package Higher current-rating (by 23%) vs D2PAK (of same die-size) High-current carrying capability package(up to 240 A, die-size dependent)
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Datasheet
Datasheet Summary
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The IRFS7730-7P is a 75V N-channel HEXFET power MOSFET in a D2Pak-7Pin package, designed for high-current applications such as motor drives, synchronous rectification, and DC/DC conversion. It has a typical on-resistance of 1.70 mΩ at VGS = 10V and ID = 100A, with a maximum continuous drain current of 240 A limited by the package. The device features enhanced ruggedness, fully characterized avalanche and dynamic dV/dt performance, and a body diode with high dv/dt and di/dt capability. It is RoHS compliant and meets JEDEC JESD47F industrial qualification standards. Thermal resistance from junction to case is rated at 0.40 °C/W max.

Datasheet Summary
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The IRFS7730-7P is a 75V N-channel HEXFET power MOSFET in a D2Pak-7Pin package, designed for high-current applications such as motor drives, synchronous rectification, and DC/DC conversion. It has a typical on-resistance of 1.70 mΩ at VGS = 10V and ID = 100A, with a maximum continuous drain current of 240 A limited by the package. The device features enhanced ruggedness, fully characterized avalanche and dynamic dV/dt performance, and a body diode with high dv/dt and di/dt capability. It is RoHS compliant and meets JEDEC JESD47F industrial qualification standards. Thermal resistance from junction to case is rated at 0.40 °C/W max.

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N-Channel Power MOSFET - IRFS7730-7P - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS7730-7P
N-Channel Power MOSFET IRFS7730-7P
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate drive voltage (called normal level) Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package Higher current-rating (by 23%) vs D2PAK (of same die-size) High-current carrying capability package(up to 240 A, die-size dependent)

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package


Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate drive voltage (called normal level)
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
  • Higher current-rating (by 23%) vs D2PAK (of same die-size)
  • High-current carrying capability package(up to 240 A, die-size dependent)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS7730-7P
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0020 ohms
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