Infineon Technologies AG N-Channel Power MOSFET IRFS7430

Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
  • N-Channel Power MOSFET - IRFS7430 - Infineon Technologies AG
    Infineon Technologies AG
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Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
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Datasheet
Datasheet Summary
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The IRFS7430 is a 40V N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package, designed for high-current switching applications such as motor drives, synchronous rectifiers, and DC/DC converters. It has a maximum continuous drain current of 426A at 25°C and a typical on-resistance of 0.97mΩ at 10V gate voltage and 100A drain current. The device supports a gate-to-source voltage of ±20V and operates with a junction temperature range of -55°C to +175°C. It has a single-pulse avalanche energy rating of 760mJ and meets RoHS compliance standards. The package is surface-mount and compatible with standard PCB mounting techniques.

Datasheet Summary
Powered by GS/AI

The IRFS7430 is a 40V N-channel HEXFET power MOSFET in a D2-Pak (TO-263) package, designed for high-current switching applications such as motor drives, synchronous rectifiers, and DC/DC converters. It has a maximum continuous drain current of 426A at 25°C and a typical on-resistance of 0.97mΩ at 10V gate voltage and 100A drain current. The device supports a gate-to-source voltage of ±20V and operates with a junction temperature range of -55°C to +175°C. It has a single-pulse avalanche energy rating of 760mJ and meets RoHS compliance standards. The package is surface-mount and compatible with standard PCB mounting techniques.

Suppliers

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N-Channel Power MOSFET - IRFS7430 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS7430
N-Channel Power MOSFET IRFS7430
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package


Applications

  • Energy Storage Systems

Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Silicon optimized for applications switching below <100 KHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS7430
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 ohms
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