Infineon Technologies AG N-Channel Power MOSFET IRFS7430

Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
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Description
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRFS7430 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS7430
N-Channel Power MOSFET IRFS7430
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package Applications Energy Storage Systems Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Silicon optimized for applications switching below <100 KHz Softer body-diode compared to previous silicon generation Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave soldered

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package


Applications

  • Energy Storage Systems

Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Silicon optimized for applications switching below <100 KHz
  • Softer body-diode compared to previous silicon generation
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS7430
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 ohms
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