N-channel HEXFET power MOSFET in a D2-Pak package, rated for 150V drain-to-source voltage with a continuous drain current of 33A at 25°C and 24A at 100°C. The static drain-to-source on-resistance is 34.5mΩ typical and 42mΩ maximum at 10V gate-source voltage. The device has a pulsed drain current capability of 140A, a maximum power dissipation of 144W, and a junction-to-case thermal resistance of 1.045°C/W. It meets a single-pulse avalanche energy rating of 109mJ and operates from -55°C to +175°C. The gate-to-source voltage is ±20V, and the device features a body diode with a forward voltage of 1.3V at 21A.
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Applications
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFS4615 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0420 ohms |
