Infineon Technologies AG N-Channel Power MOSFET IRFS4615

Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Light electric vehicles (LEV) Designers who used this product also designed with BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET
  • N-Channel Power MOSFET - IRFS4615 - Infineon Technologies AG
    Infineon Technologies AG
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Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Light electric vehicles (LEV) Designers who used this product also designed with BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
N-Channel Power MOSFET - IRFS4615 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS4615
N-Channel Power MOSFET IRFS4615
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Light electric vehicles (LEV) Designers who used this product also designed with BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET BAS40-05W | Schottky Diodes IPD35N12S3L-24 | Automotive MOSFET

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Applications

  • Light electric vehicles (LEV)

Designers who used this product also designed with


  • BAS40-05W |
    Schottky Diodes
  • IPD35N12S3L-24 |
    Automotive MOSFET
  • BAS40-05W |
    Schottky Diodes
  • IPD35N12S3L-24 |
    Automotive MOSFET
  • BAS40-05W |
    Schottky Diodes
  • IPD35N12S3L-24 |
    Automotive MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS4615
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0420 ohms
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