Infineon Technologies AG N-Channel Power MOSFET IRFS4321

Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
  • N-Channel Power MOSFET - IRFS4321 - Infineon Technologies AG
    Infineon Technologies AG
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Description
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
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Datasheet
Datasheet Summary
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The IRFS4321PbF and IRFSL4321PbF are 150V N-channel HEXFET power MOSFETs in D2-Pak and TO-262 packages, respectively. They feature a typical on-resistance of 12mΩ at 10V gate voltage and a continuous drain current of 85A at 25°C. The devices support a gate-to-source voltage of ±30V and have a single-pulse avalanche energy rating of 120mJ. Junction temperature ranges from -55°C to 175°C, with a thermal resistance of 0.43°C/W junction-to-case. The parts are fully characterized for switching performance, with a total gate charge of 71nC typical and reverse recovery time of 89ns. They meet RoHS compliance and are qualified for industrial use.

Datasheet Summary
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The IRFS4321PbF and IRFSL4321PbF are 150V N-channel HEXFET power MOSFETs in D2-Pak and TO-262 packages, respectively. They feature a typical on-resistance of 12mΩ at 10V gate voltage and a continuous drain current of 85A at 25°C. The devices support a gate-to-source voltage of ±30V and have a single-pulse avalanche energy rating of 120mJ. Junction temperature ranges from -55°C to 175°C, with a thermal resistance of 0.43°C/W junction-to-case. The parts are fully characterized for switching performance, with a total gate charge of 71nC typical and reverse recovery time of 89ns. They meet RoHS compliance and are qualified for industrial use.

Suppliers

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N-Channel Power MOSFET - IRFS4321 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS4321
N-Channel Power MOSFET IRFS4321
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS4321
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0150 ohms
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