Infineon Technologies AG N-Channel Power MOSFET IRFS4227

Description
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package
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Description
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package
Request a Quote
Datasheet
Datasheet Summary
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IRFS4227 is a 200V N-Channel HEXFET Power MOSFET in a D2Pak package, designed for PDP sustain, energy recovery, and pass switch applications. It has a maximum continuous drain current of 62 A at 25°C and 44 A at 100°C, with a typical on-resistance of 22 mΩ at VGS = 10V. The device supports a maximum junction temperature of 175°C and features repetitive avalanche capability with a rated voltage of 240 V and energy of 46 mJ. It meets AEC-Q200 qualification standards for industrial use and is mounted on a PCB with a thermal resistance from junction to ambient of 40°C/W. The package dimensions and lead configuration conform to industry specifications for D2Pak.

Datasheet Summary
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IRFS4227 is a 200V N-Channel HEXFET Power MOSFET in a D2Pak package, designed for PDP sustain, energy recovery, and pass switch applications. It has a maximum continuous drain current of 62 A at 25°C and 44 A at 100°C, with a typical on-resistance of 22 mΩ at VGS = 10V. The device supports a maximum junction temperature of 175°C and features repetitive avalanche capability with a rated voltage of 240 V and energy of 46 mJ. It meets AEC-Q200 qualification standards for industrial use and is mounted on a PCB with a thermal resistance from junction to ambient of 40°C/W. The package dimensions and lead configuration conform to industry specifications for D2Pak.

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N-Channel Power MOSFET - IRFS4227 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS4227
N-Channel Power MOSFET IRFS4227
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package

200V Single N-Channel HEXFET Power MOSFET PDP Switch in a D2-Pak package

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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS4227
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0260 ohms
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