Infineon Technologies AG Transistor IRFS41N15DPBF

Description
N CHANNEL MOSFET, 150V, 41A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:41A; DRAIN SOURCE VOLTAGE VDS:150V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY
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Description
N CHANNEL MOSFET, 150V, 41A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:41A; DRAIN SOURCE VOLTAGE VDS:150V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 17282456 - Radwell International
Willingboro, NJ, United States
Transistor
17282456
Transistor 17282456
N CHANNEL MOSFET, 150V, 41A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:41A; DRAIN SOURCE VOLTAGE VDS:150V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 150V, 41A, D2-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:41A; DRAIN SOURCE VOLTAGE VDS:150V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS41N15DPBF - 069581-IRFS41N15DPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS41N15DPBF
069581-IRFS41N15DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS41N15DPBF 069581-IRFS41N15DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 069581-IRFS41N15DPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 41A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 2520pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 069581-IRFS41N15DPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 41A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2520pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 45 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFS41N15DPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS41N15DPBF-ND
Single FETs, MOSFETs IRFS41N15DPBF-ND
N-Channel 150V 41A (Tc) 3.1W (Ta) Surface Mount D2PAK

N-Channel 150V 41A (Tc) 3.1W (Ta) Surface Mount D2PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS41N15DPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS41N15DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS41N15DPBF
MOSFET N-CH 150V 41A D2PAK

MOSFET N-CH 150V 41A D2PAK

Supplier's Site

Technical Specifications

  Radwell International Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 17282456 069581-IRFS41N15DPBF IRFS41N15DPBF-ND IRFS41N15DPBF
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS41N15DPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 3100 milliwatts
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