IRFS4115 is a 150V N-channel HEXFET power MOSFET in a D2-Pak package, designed for high-efficiency synchronous rectification and high-speed switching in SMPS and UPS applications. It has a continuous drain current of 99A at 25°C (silicon-limited) and 195A (package-limited), with a maximum drain-to-source on-resistance of 12.1 mΩ at 10V gate drive. The device supports a peak pulsed drain current of 396A and has a maximum power dissipation of 375W at 25°C. Junction-to-case thermal resistance is 0.4°C/W, and junction-to-ambient is 40°C/W. It features a single-pulse avalanche energy rating of 830 mJ and is RoHS compliant. The body diode exhibits reverse recovery charge of up to 450 nC at 125°C and a maximum forward voltage of 1.3V at 62A. The part is qualified for industrial applications and meets JEDEC standards.
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFS4115 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0121 ohms |
