Infineon Technologies AG N-Channel Power MOSFET IRFS3806

Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
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Description
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered
Request a Quote
Datasheet
Datasheet Summary
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IRFS3806 is a 60 V N-channel HEXFET Power MOSFET in a D2Pak package designed for high-efficiency synchronous rectification and high-speed switching in SMPS and uninterruptible power supplies. It has a maximum continuous drain current of 43 A at 25°C, a typical on-resistance of 12.6 mΩ at 10 V gate voltage, and a peak pulsed drain current of 170 A. The device supports a gate-to-source voltage of ±20 V and operates with a junction temperature range of -55°C to +175°C. It meets AEC-Q200 qualification standards and is rated for a single-pulse avalanche energy of 73 mJ. The D2Pak package offers a junction-to-ambient thermal resistance of 40 °C/W when mounted on a PCB.

Datasheet Summary
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IRFS3806 is a 60 V N-channel HEXFET Power MOSFET in a D2Pak package designed for high-efficiency synchronous rectification and high-speed switching in SMPS and uninterruptible power supplies. It has a maximum continuous drain current of 43 A at 25°C, a typical on-resistance of 12.6 mΩ at 10 V gate voltage, and a peak pulsed drain current of 170 A. The device supports a gate-to-source voltage of ±20 V and operates with a junction temperature range of -55°C to +175°C. It meets AEC-Q200 qualification standards and is rated for a single-pulse avalanche energy of 73 mJ. The D2Pak package offers a junction-to-ambient thermal resistance of 40 °C/W when mounted on a PCB.

Suppliers

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Supplier Links
N-Channel Power MOSFET - IRFS3806 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFS3806
N-Channel Power MOSFET IRFS3806
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Optimized for 10 V gate-drive voltage (called normal level) Industry standard surface-mount power package High-current carrying capability package (up to 195 A, die-size dependent) Capable of being wave-soldered

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFS3806
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0158 ohms
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