The IRFS3607PbF is a power MOSFET designed for high efficiency synchronous rectification and high speed switching in SMPS and uninterruptible power supplies. It is packaged in a D2Pak surface mount format with a thermal resistance from junction to ambient of 40°C/W. The device has a drain-to-source breakdown voltage of 75V, a maximum continuous drain current of 80A at 25°C, and a maximum on-resistance of 9.0mΩ at 10V gate-source voltage. It supports a pulsed drain current of 310A, a maximum power dissipation of 140W, and a junction temperature range from -55°C to 175°C. The avalanche energy rating is 120mJ for a single pulse. The body diode has a forward voltage of 1.3V at 46A and a peak diode recovery dv/dt of 27V/ns. The gate-to-source voltage is rated at ±20V.
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 32AC0720 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
