75V N-channel Power MOSFET in a D2-Pak package with a maximum continuous drain current of 80A at 25°C, a typical on-resistance of 7.34mΩ at 10V gate-source voltage, and a peak pulsed drain current of 310A. The device supports avalanche energy up to 120mJ in single pulse conditions and has a junction temperature range of -55°C to 175°C. Thermal resistance from junction to ambient is 40°C/W when mounted on a PCB. The body diode exhibits a maximum forward voltage of 1.3V at 46A and a peak dV/dt capability of 27V/ns at 175°C.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFS3607 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0090 ohms |
