Infineon Technologies AG N-Channel Power MOSFET IRFS3107

IRFS3107 is a 75V N-Channel HEXFET Power MOSFET in a D2-Pak package, designed for high-efficiency synchronous rectification and high-speed switching. The device has a typical on-resistance of 2.5 mΩ at 10V gate drive and 140A drain current, with a continuous drain current rating of 230A at 25°C (silicon limited) and 195A (package limited). It features a maximum power dissipation of 370W, junction-to-case thermal resistance of 0.40°C/W, and single-pulse avalanche energy of 300 mJ. The gate-to-source voltage is rated at ±20V, and it is lead-free and compliant with RoHS. The package dimensions follow the D2-Pak standard with a mounting torque of 10 lb·in.