MOSFET P-CH 100V 6.6A DPAK Product overview: IRFR9120NTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 6.6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 6.6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR9120NTRPBF can be used for catalog matching and distributor lookup.
HEXFET P-Ch MOSFET 6.6A 100V DPAK
Manufacturer: Infineon Technologies
Win Source Part Number: 017700-IRFR9120NTRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 40W (Tc)
Family Name: IRFR9120N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 3.9A, 10V
Alternative Parts (Cross-Reference): AP10P10GH-HF; IRFR9120; SiHFR9120TR-GE3;
Introduction Date: March 10, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
P-Channel 100V 6.6A (Tc) 40W (Tc) Surface Mount D-Pak
MOSFET P-CH 100V 6.6A DPAK
MOSFET P-CH 100V 6.6A DPAK
MOSFET 20V -100V P-CH FET 480mOhms 18nC
P CHANNEL MOSFET, -100V, 6.6A D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:6.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
(PRICE/TC) P CHANNEL MOSFET, -100V, 6.6A D-PAK; TRANSISTOR POLARITY:P CHANNEL; CONTINUOUS DRAIN CURRENT ID:-6.6A; DRAIN SOURCE VOLTAGE VDS:-100V; ON R. FREE 2 YEAR RADWELL WARRANTY
(PRICE/TC) P CHANNEL MOSFET, -100V, 6.6A D-PAK; TRANSISTOR POLARITY:P CHANNEL; DRAIN SOURCE VOLTAGE VDS:100V; CONTINUOUS DRAIN CURRENT ID:6.6A; ON RESISTANCE RDS(ON):0.48OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT:. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 100V 6.6A DPAK
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-IRFR9120NTRPBF | 9134795 | 8274082P | 017700-IRFR9120NTRPBF | IRFR9120NPBFTR-ND | IRFR9120NTRPBF | 376-IRFR9120NTRPBF | IRFR9120NTRPBF | 40M7907 | 17331017 | IRFR9120NTRPBF |
| Product Name | 100V 6.6A DPAK MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR9120NTRPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET P-CH 100V 6.6A DPAK | MOSFET | P Channel Mosfet, -100V, 6.6A D-Pak; Channel Type Infineon | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | -100 volts | |||||||
| PD | 39 milliwatts | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
