Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF IRFR5305PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017691-IRFR5305PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF - 017691-IRFR5305PBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFR5305PBF-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR5305PBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • P Channel Mosfet, -55V, 31A, D-Pak; Channel Type Infineon - 63J6989 - Newark, An Avnet Company
    Newark, An Avnet Company
  • MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W - 70017043 - Allied Electronics, Inc.
    Allied Electronics, Inc.
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017691-IRFR5305PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF - 017691-IRFR5305PBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF
017691-IRFR5305PBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF 017691-IRFR5305PBF
Manufacturer: Infineon Technologies Win Source Part Number: 017691-IRFR5305PBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 31A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 63nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017691-IRFR5305PBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 31A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 63nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 16A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFR5305PBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR5305PBF-ND
Single FETs, MOSFETs IRFR5305PBF-ND
P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak

P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
55V 31A DPAK MOSFET Transistor
278-IRFR5305PBF
55V 31A DPAK MOSFET Transistor 278-IRFR5305PBF
MOSFET P-CH 55V 31A DPAK Product overview: IRFR5305PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR5305PBF can be used for catalog matching and distributor lookup.

MOSFET P-CH 55V 31A DPAK Product overview: IRFR5305PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 31A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 31A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR5305PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR5305PBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR5305PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR5305PBF
MOSFET P-CH 55V 31A DPAK

MOSFET P-CH 55V 31A DPAK

Supplier's Site
P Channel Mosfet, -55V, 31A, D-Pak; Channel Type Infineon - 63J6989 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -55V, 31A, D-Pak; Channel Type Infineon
63J6989
P Channel Mosfet, -55V, 31A, D-Pak; Channel Type Infineon 63J6989
P CHANNEL MOSFET, -55V, 31A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

P CHANNEL MOSFET, -55V, 31A, D-PAK; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W - 70017043 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
70017043
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W 70017043
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017691-IRFR5305PBF IRFR5305PBF-ND 278-IRFR5305PBF IRFR5305PBF 63J6989 70017043
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR5305PBF Single FETs, MOSFETs 55V 31A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs P Channel Mosfet, -55V, 31A, D-Pak; Channel Type Infineon MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel
V(BR)DSS 55 volts 55 volts -55 volts
PD 110000 milliwatts 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3 TO-252 (DPAK)
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