The IRFR4105ZTRPBF is a HEXFET® Power MOSFET designed for high efficiency and reliability in various applications. It features a maximum drain-to-source breakdown voltage of 55V and a low on-resistance of 24.5 m,Ѷ at a gate-source voltage of 10V and a drain current of 18A. The device supports a continuous drain current of 30A at 25°C and can operate at junction temperatures up to 175°C, making it suitable for demanding environments. This MOSFET has a maximum power dissipation of 48W and is packaged in a D-Pak case, which is compatible with surface mount technology. The gate threshold voltage ranges from 2.0V to 4.0V, and it has a total gate charge of 27nC, indicating efficient switching performance. The device is halogen-free and compliant with environmental standards, making it a suitable choice for engineers looking for reliable and eco-friendly components.
MOSFET N-CH 55V 30A DPAK Product overview: IRFR4105ZTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 30A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 30A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR4105ZTRPBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1047070-IRFR4105ZTRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 48W (Tc)
Family Name: IRFR4105
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 740pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): TSM340N06CP ROG; STD30NF06L; STD30NE06L; STD30NF06;
Introduction Date: August 25, 2003
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
N-Channel 55V 30A (Tc) 48W (Tc) Surface Mount D-Pak
N-Channel 55V 30A (Tc) 48W (Tc) Surface Mount D-Pak
N-Channel 55V 30A (Tc) 48W (Tc) Surface Mount D-Pak
55V 30A 24.5mΩ@18A,10V 48W 4V@250uA null DPAK MOSFETs ROHS
MOSFET, N-CH, 55V, 30A, TO-252AA; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 55V 30A DPAK
MOSFET N-CH 55V 30A DPAK
MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFR4105ZTRPBF | 8274066 | 8274066P | 1047070-IRFR4105ZTRPBF | IRFR4105ZTRPBFDKR-ND | IRFR4105ZTRPBF | 13AC9140 | IRFR4105ZTRPBF | IRFR4105ZTRPBF | IRFR4105ZTRPBF |
| Product Name | 55V 30A DPAK MOSFET Transistor | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR4105ZTRPBF | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 55V, 30A, To-252Aa; Transistor Polarity Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | ||||||
| Transconductance | 0.0160 kS | |||||||||
| PD | 48 milliwatts | 48000 milliwatts | 48000 milliwatts | 48000 milliwatts |
